Relaxation of the resistive superconducting state in boron-doped diamond films

نویسندگان

  • A. Kardakova
  • A. Shishkin
  • A. Semenov
  • G. N. Goltsman
  • S. Ryabchun
  • T. M. Klapwijk
  • E. Bustarret
چکیده

We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5 × 1021 cm−3 and a critical temperature of about 2 K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T −2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films.

Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been ...

متن کامل

Selected topics related to the transport and superconductivity in boron-doped diamond.

This contribution deals with a few topics closely related to the superconductivity in the heavily boron-doped diamond which are, in our opinion, not properly treated in the current literature. Attention is paid especially to the classification of metallic and insulating state, selection of pairing mechanism, limits of weak coupling approximation and to the influence of granularity on the superc...

متن کامل

Low-energy electrodynamics of superconducting diamond.

Heavily boron-doped, diamond films can become superconducting with critical temperatures Tc well above 4 K. Here we first measure the reflectivity of such a film down to 5 cm(-1), by also using coherent synchrotron radiation. We thus determine the optical gap 2Delta, the field penetration depth lambda, the range of action of the Ferrell-Glover-Tinkham sum rule, and the electron-phonon spectral ...

متن کامل

Superconductivity of hexagonal heavily-boron doped silicon carbide

In 2004 the discovery of superconductivity in heavily boron-doped diamond (C:B) led to an increasing interest in the superconducting phases of wide-gap semiconductors. Subsequently superconductivity was found in heavily boron-doped cubic silicon (Si:B) and recently in the stochiometric ”mixture” of heavily boron-doped silicon carbide (SiC:B). The latter system surprisingly exhibits type-I super...

متن کامل

Current image tunneling spectroscopy of boron-doped nanodiamonds

The electron field emission properties of the nanodiamond films were examined using scanning tunneling microscopic sSTMd technique. Current image tunneling spectroscopic measurements reveal the direct dependence of electron tunneling/field emission behavior of the films on the proportion of grain boundaries present. Local tunneling current-voltage sIt–Vd measurements show that incorporation of ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2016